Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

Abstract

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments.

arXiv comment4 pages; 4 figures

References in corpus (4)

• The electronic properties of graphene
• Gate-tunable Phase Transitions in 1T-TaS${}_2$
• Atomic Lattice Disorder in Charge Density Wave Phases of Exfoliated Dichalcogenides (1T-TaS2)
• Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS${}_2$: Detection of the commensurate charge density wave phase through Raman scattering

Cited by in corpus (16)

• Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
• Low-Frequency Noise and Sliding of the Charge Density Waves in Two-Dimensional Materials
• Two Phonon Interactions and Charge Density Wave in Single Crystalline VSe2 Probed by Raman Spectroscopy
• Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
• Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS${}_2$/2H-MoS${}_2$ T-Junction
• Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices
• Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
• Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
• Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS${}_2$ Fillers
• Large optical tunability from charge density waves in 1T-TaS${}_2$ under incoherent illumination
• Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
• The Influence of Dimensionality on the Charge Density Wave Transition and Its Application on Mid-infrared Photodetection
• Thickness dependent charge density wave networks on thin 1T-TaS${}_2$
• Enhanced thermopower in a magnetic semiconductor EuTe4 with multiple charge-density-wave instabilities/
• Charge-Density-Wave Oscillator Networks for Solving Combinatorial Optimization Problems
• Strain Engineering of Correlated Charge-Ordered Phases in 1T-TaS2