activity
20152023
most citedTotal Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

48 citations · 118 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2023

A first-principles approach to closing the "10-100 eV gap" for charge-carrier thermalization in semiconductors

Dallin O. Nielsen, Chris G. Van de Walle, Sokrates T. Pantelides +3

The present work is concerned with studying accurately the energy-loss processes that control the thermalization of hot electrons and holes that are generated by high-energy radiat…

physics.ins-det2022★ 9 cited

Response of a Commercial 0.25 um Thin-Film Silicon-on-Sapphire CMOS Technology to Total Ionizing Dose

Michael P. King, Datao Gong, Chonghan Liu +7

The radiation response of a 0.25 um silicon-on-sapphire CMOS technology is characterized at the transistor and circuit levels utilizing both standard and enclosed layout devices. D…

physics.optics2021★ 14 cited

High Energy Irradiation Effects on Silicon Photonic Passive Devices

Yue Zhou, Dawei Bi, Songlin Wang +5

In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and 60Co gamma…

physics.app-ph2019★ 36 cited

Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices

A. Geremew, F. Kargar, E. X. Zhang +8

Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing dam…

physics.ins-det2018

State-of-the-Art Flash Chips for Dosimetry Applications

Preeti Kumari, Levi Davies, Narayana P. Bhat +4

In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radi…

physics.app-ph2017★ 48 cited

Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices

G. Liu, E. X. Zhang, C. D. Liang +4

The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Thre…

cond-mat.mes-hall2015★ 1 cited

Optical Response of Monolayer CdTe/CdS Quantum Dots to X-rays and Gamma-rays

Girija Gaur, Dmitry S. Koktysh, Daniel M. Fleetwood +4

We investigate the influence of X-ray and gamma-ray irradiation on the photophysical properties of sub-monolayer CdTe/CdS quantum dots (QDs) immobilized in porous silica (PSiO2) sc…

cond-mat.mes-hall2015★ 10 cited

Interfacial Effects on the Optical Properties of CdTe/CdS Quantum Dots

Girija Gaur, Dmitry S. Koktysh, Daniel M. Fleetwood +3

Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and photoluminescence intensities o…