Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2

Abstract

The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

Accepted, Phys. Rev. Lett

References in corpus (8)

• Topological Insulators with Inversion Symmetry
• Classification of stable three-dimensional Dirac semimetals with nontrivial topology
• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2
• Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films
• Quantum oscillations and Berry's phase in topological insulator surface states with broken particle-hole symmetry
• Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2
• Topological tuning in three-dimensional Dirac semimetals

Cited by in corpus (4)

• Quantum Transport in Topological Semimetals under Magnetic Fields
• Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films
• Basal-plane growth of cadmium arsenide by molecular beam epitaxy
• Absence of signatures of Weyl orbits in the thickness dependence of quantum transport in cadmium arsenide