188 citations · 358 across the 10 of their papers we have counts for
11 papers
Point group symmetry of cadmium arsenide thin films determined by convergent beam electron diffraction
Honggyu Kim, Manik Goyal, Salva Salmani-Rezaie +4
Cadmium arsenide (Cd3As2) is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room temperature crystal struc…
Basal-plane growth of cadmium arsenide by molecular beam epitaxy
David A. Kealhofer, Honggyu Kim, Timo Schumann +3
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the…
Electron nematic fluid in a strained Sr3Ru2O7 film
Patrick B. Marshall, Kaveh Ahadi, Honggyu Kim +1
Sr3Ru2O7 belongs to the family of layered strontium ruthenates and exhibits a range of unusual emergent properties, such as electron nematic behavior and metamagnetism. Here, we sh…
Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
Kaveh Ahadi, Honggyu Kim, Susanne Stemmer
Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interfa…
Two-Dimensional Dirac Fermions in Thin Films of Cd3As2
Luca Galletti, Timo Schumann, Omor F. Shoron +4
Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electr…
Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
Timo Schumann, Luca Galletti, David A. Kealhofer +3
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electroni…
Response of the lattice across the filling-controlled Mott metal-insulator transition of a rare earth titanate
Honggyu Kim, Patrick B. Marshall, Kaveh Ahadi +3
The lattice response of a prototype Mott insulator, SmTiO3, to hole doping is investigated with atomic-scale spatial resolution. SmTiO3 films are doped with Sr on the Sm site with…
Growth of strontium ruthenate films by hybrid molecular beam epitaxy
Patrick B. Marshall, Honggyu Kim, Kaveh Ahadi +1
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxyg…
Disorder versus two transport lifetimes in a strongly correlated electron liquid
Patrick B. Marshall, Honggyu Kim, Susanne Stemmer
We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by mo…
Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice
Honggyu Kim, Yifei Meng, Jean-Luc Rouviére +1
We report on a direct measurement of cation and anion sub-lattice strain in an InAs/GaSb type-II strained layer superlattice (T2SLs) using atomic resolution Z-contrast imaging and…
Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films
Jack Y. Zhang, Honggyu Kim, Evgeny Mikheev +2
Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large comp…