Optical trapping of electrons in graphene

Abstract

We propose an experimentally friendly scheme for trapping quasi- relativistic elec- trons in graphene by an electromagnetic beam with circular polarization and spatially inhomogeneous profile with an intensity dip. The trapping is achieved due to the ef- fect of bandgap opening outside the trapping region. The proposed mechanism allows for non- invasive electron confinement in graphene without any need of the chemical patterning of the sample or the application of metallic gates.

References in corpus (9)

• Driven quantum transport on the nanoscale
• Photo-Induced Topological Phase Transition and a Single Dirac-Cone State in Silicene
• Irradiated graphene as a tunable Floquet topological insulator
• Gap opening in graphene by shear strain
• All-optical band engineering of gapped Dirac materials
• Wave packet dynamics in a monolayer graphene
• Floquet interface states in illuminated three-dimensional topological insulators
• Transport properties of a two-dimensional electron gas dressed by light
• Optically induced Lifshitz transition in bilayer graphene