Largely tunable band structures of few-layer InSe by uniaxial strain

Abstract

Due to the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent bandgap, spanning the visible and near infrared regions, and thus recently draws tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structure. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain, and observe salient shift of photoluminescence (PL) peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for 4- to 8-layer samples, which is much larger than that for the widely studied MoS2 monolayer. Density functional calculations well reproduce the observed layer-dependent bandgaps and the strain effect, and reveal that the shift rate decreases with increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile 2D electronic and optoelectronic material, which is suitable for tunable light emitters, photo-detectors and other optoelectronic devices.

arXiv commentsubmitted

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• Drastic enhancement of the Raman intensity in few-layer InSe by uniaxial strain
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe${}_3$
• Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors
• Electrical detection of the flat band dispersion in van der Waals field-effect structures
• Crossover from weakly indirect to direct excitons in atomically thin films of InSe
• Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures
• Terahertz control of photoluminescence emission in few-layer InSe
• Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches
• Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
• Mechanical Properties and Fracture Phenomenon of Defected Monolayer Indium Selenide: A Molecular Dynamics Study