First principles study of charge diffusion between proximate solid state qubits and its implications on sensor applications
arXiv:1708.08626 · doi:10.1103/PhysRevLett.120.136401
Abstract
Solid state qubits from paramagnetic point defects in solids are promising platforms to realize quantum networks and novel nanoscale sensors. Recent advances in materials engineering make possible to create proximate qubits in solids that might interact with each other, leading to electron spin/charge fluctuation. Here we develop a method to calculate the tunneling-mediated charge diffusion between point defects from first principles, and apply it to nitrogen-vacancy (NV) qubits in diamond. The calculated tunneling rates are in quantitative agreement with previous experimental data. Our results suggest that proximate neutral and negatively charged NV defect pairs can form an NV--NV molecule. A tunneling-mediated model for the source of decoherence of the near-surface NV qubits is developed based on our findings on the interacting qubits in diamond.
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Cited by in corpus (6)
- Identifying and mitigating charge instabilities in shallow diamond nitrogen-vacancy centers
- Selective measurement of charge dynamics in an ensemble of nitrogen-vacancy centers in nano- and bulk diamonds
- Charge qubit in van der Waals heterostructures
- Photoinduced charge injection from shallow point defects in diamond into water
- Cooperative dynamic polaronic picture of diamond color centers
- Magnon Condensation in a Dense Nitrogen-Vacancy Spin Ensemble