Probing the Fermi surface and magnetotransport properties in MoAs${}_2$

Abstract

Transition metal dipnictides (TMDs) have recently been identified as possible candidates to host topology protected electronic band structure. These materials belong to an isostructural family and show several exotic transport properties. Especially, the large values of magnetoresistance (MR) and carrier mobility have drawn significant attention from the perspective of technological applications. In this report, we have investigated the magnetotransport and Fermi surface properties of single crystalline MoAs${}_2$, another member of this group of compounds. Field induced resistivity plateau and a large MR have been observed, which are comparable to several topological systems. Interestingly, in contrast to other isostructural materials, the carrier density in MoAs${}_2$ is quite high and shows single-band dominated transport. The Fermi pockets, which have been identified from the quantum oscillation, are largest among the members of this group and have significant anisotropy with crystallographic direction. Our first-principles calculations reveal a substantial difference between the band structures of MoAs${}_2$ and other TMDs. The calculated Fermi surface consists of one electron pocket and another 'open-orbit' hole pocket, which has not been observed in TMDs so far.

8 pages, 9 figures

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Cited by in corpus (9)

• Planar Hall effect in type II Dirac semimetal VAl${}_3$
• Magnetotransport properties of the topological nodal-line semimetal CaCdSn
• Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP${}_2$
• Anisotropic Scattering in Goniopolar Metal NaSn${}_2$As${}_2$
• Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs${}_2$ and W${}_2$As${}_3$ with extremely large magnetoresistance
• Experimental detection of topological electronic state and large linear magnetoresistance in $SrS{n}_4$ superconductor
• Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V${}_5$S${}_8$ Single Crystal
• Dirac state switching in transition metal diarsenides
• Electronic structure in a transition metal dipnictide TaAs2