Experimental detection of topological electronic state and large linear magnetoresistance in $SrS{n}_4$ superconductor

Abstract

While recent experiments confirm the existence of hundreds of topological electronic materials, only a few exhibit the coexistence of superconductivity and a topological electronic state. These compounds attract significant attention in forefront research because of the potential for the existence of topological superconductivity, paving the way for future technological advancements. $SrS{n}_4$ is known for exhibiting unusual superconductivity below the transition temperature ($T_C$) of 4.8 K. Recent theory predicts a topological electronic state in this compound, which is yet to be confirmed by experiments. Systematic and detailed studies of the magnetotransport properties of $SrS{n}_4$ and its Fermi surface characterizations are also absent. For the first time, a quantum oscillation study reveals a nontrivial $\pi$ Berry phase, very light effective mass, and high quantum mobility of charge carriers in $SrS{n}_4$. Magnetotransport experiment unveils large linear transverse magnetoresistance (TMR) of more than 1200% at 5 K and 14 T. Angle-dependent transport experiments detect anisotropic and four-fold symmetric TMR, with the maximum value ($\sim$ 2000%) occurring when the angle between the magnetic field and the crystallographic b-axis is 45 degree. Our results suggest that $SrS{n}_4$ is the first topological material with superconductivity above the boiling point of helium that displays such high magnetoresistance.

Advanced Functional Materials, Published online on 10th October,2024

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