Optimal charge-to-spin conversion in graphene on transition metal dichalcogenides

Abstract

When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this work, we show that the characteristic spin winding of low-energy states in graphene on TMD monolayer enables current-driven spin polarization known as the inverse spin galvanic effect (ISGE). By introducing a proper figure of merit, we quantify the efficiency of charge-to-spin conversion and show it is close to unity when the Fermi level approaches the spin minority band. Remarkably, at high electronic density, even though sub-bands with opposite spin helicities are occupied, the efficiency decays only algebraically. The giant ISGE predicted for graphene on TMD monolayer is robust against disorder and remains large at room temperature.

5 pages, 3 figures + supplemental material (5 pages, 4 figures); accepted version

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Cited by in corpus (3)

• Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$
• Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
• Spin-charge conversion in disordered two-dimensional electron gases lacking inversion symmetry