Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride
arXiv:1706.01655 · doi:10.1039/C7NR02578E
Abstract
Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ratio of working-gases. Edge directions were determined with the help of both moiré pattern and atomic-resolution image obtained via atomic force microscopy measurement. It is believed that the variation on graphene edges mainly attributes to different growth rates of armchair and zigzag edges. This work demonstrated here points out a potential approach to fabricate graphene ribbons on h-BN.
7 pages, 4 figures
References in corpus (6)
- Half-Metallic Graphene Nanoribbons
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
- Rapid and catalyst-free CVD growth of graphene on hBN