Promising Ferroelectricity in 2D Group IV Tellurides: a First-Principles Study

Abstract

Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X=Si, Ge and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.

5 pages, 5 figures

References in corpus (7)

• Phosphorene: A New 2D Material with High Carrier Mobility
• Van der Waals density functionals applied to solids
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Physics of thin-film ferroelectric oxides
• Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
• Emergence of ferroelectricity and spin-valley properties in two-dimensional honeycomb binary compounds
• Engineering relativistic effects in ferroelectric SnTe

Cited by in corpus (22)

• Two-Dimensional Multiferroic Semiconductors with Coexisting Ferroelectricity and Ferromagnetism
• Tunable ferroelectricity and anisotropic electric transport in monolayer $\beta$-GeSe
• Intrinsic persistent spin helix in two-dimensional group-IV monochalcogenide MX (M : Sn, Ge; X: S, Se, Te) monolayer
• Two-dimensional ferroelectrics from high throughput computational screening
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Ultrathin SnTe films as a route towards all-in-one spintronics devices
• In-Plane Ferroelectric Tunnel Junction
• From atomic layer to the bulk: low-temperature atomistic structure, ferroelectric and electronic properties of SnTe films
• Two dimensional silicon chalcogenides with high carrier mobility for photocatalytic water splitting
• Tunable magnetism in ferroelectric α-In2Se3 by hole-doping
• Shift current response in elemental two-dimensional ferroelectrics
• Prediction of Coupled Electronic and Phononic Ferroelectricity in Strained 2D h-NbN: First-principles Theoretical Analysis
• Interface engineering of ferroelectricity in thin films of thiophosphate ABP 2 X 6 (A = Cu, Ag; B = In, Bi, Cr, V; and X = S, Se)
• Electrically switchable hidden spin polarization in antiferroelectric crystals
• A ferroelectric problem beyond the conventional scaling law
• Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
• Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure
• Magnetoelectric behavior of breathing kagomé monolayers of ${\mathrm{Nb}}_3{(\mathrm{Cl},\mathrm{Br},\mathrm{I})}_8$ from first-principles calculations
• Mechanically and electrically switchable triferroic altermagnet in a pentagonal FeO2 monolayer
• Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in QL-XSbO${}_2$ (X= Li, Na)
• The atlas of ferroicity in two dimensional MGeX3 family: room-temperature ferromagnetic half metals and unexpected ferroelectricity and ferroelasticity
• Anisotropic terahertz optostriction in group-IV monochalcogenide compounds