Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

Abstract

We study the electron transport in metallic carbon nanotubes (CNTs) with realistic defects of different types. We focus on large CNTs with many defects in the mesoscopic range. In a recent paper we demonstrated that the electronic transport in those defective CNTs is in the regime of strong localization. We verify by quantum transport simulations that the localization length of CNTs with defects of mixed types can be related to the localization lengths of CNTs with identical defects by taking the weighted harmonic average. Secondly, we show how to use this result to estimate the conductance of arbitrary defective CNTs, avoiding time consuming transport calculations.

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• Quantum localization and electronic transport in covalently functionalized carbon nanotubes
• Silicon rebirth: Metallic prismane allotropes of silicon for the next-gen technologies
• Effect of Electron-RBM Phonon Interaction on Conductance of carbon nanotubes