Low-energy Structural Dynamics of Ferroelectric Domain Walls in Hexagonal Rare-earth Manganites

Abstract

Domain walls (DWs) in ferroic materials, across which the order parameter abruptly changes its orientation, can host emergent properties that are absent in the bulk domains. Using a broadband ($10^6-10^{10}$ Hz) scanning impedance microscope, we show that the electrical response of the interlocked antiphase boundaries and ferroelectric domain walls in hexagonal rare-earth manganites ($h-RMn{O}_3$) is dominated by the bound-charge oscillation rather than free-carrier conduction at the DWs. As a measure of the rate of energy dissipation, the effective conductivity of DWs on the (001) surfaces of $h-RMn{O}_3$ at GHz frequencies is drastically higher than that at dc, while the effect is absent on surfaces with in-plane polarized domains. First-principles and model calculations indicate that the frequency range and selection rules are consistent with the periodic sliding of the DW around its equilibrium position. This acoustic-wave-like mode, which is associated with the synchronized oscillation of local polarization and apical oxygen atoms, is localized perpendicular to the DW but free to propagate along the DW plane. Our results break the ground to understand structural DW dynamics and exploit new interfacial phenomena for novel devices.

arXiv comment20 pages, 5 figures

References in corpus (17)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Anisotropic conductance at improper ferroelectric domain walls
• Experimental demonstration of hybrid improper ferroelectricity and presence of abundant charged walls in (Ca,Sr)${}_3$Ti${}_2$O${}_7$ crystals
• The ferroelectric transition in YMnO${}_3$ from first principles
• Conduction at domain walls in insulating Pb(Zr${}_{0.2}$Ti${}_{0.8}$)O${}_3$ thin films
• Static conductivity of charged domain wall in uniaxial ferroelectric-semiconductors
• Conduction of topologically-protected charged ferroelectric domain walls
• Landau theory of topological defects in multiferroic hexagonal manganites
• "Head-to-head" and "tail-to-tail" 180-degree domain walls in an isolated ferroelectric
• Topological defects as relics of emergent continuous symmetry and Higgs condensation of disorder in ferroelectrics
• Modeling of a Cantilever-Based Near-Field Scanning Microwave Microscope
• Structural Domain Walls in Polar Hexagonal Manganites
• Conductivity of twin walls - surface junctions in ferroelastics: interplay of deformation potential, octahedral rotations, improper ferroelectricity and flexoelectric coupling
• Separation of piezoelectric grain resonance and domain wall dispersion in PZT ceramics
• Domain Wall Conductivity in Oxygen Deficient Multiferroic YMnO3 Single Crystals
• Evolution of the domain topology in a ferroelectric
• Ab initio phonon structure of h-YMnO3 in low-symmetry ferroelectric phase

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• Probing phonon softening in ferroelectrics by the scanning probe microwave spectroscopy
• Ferroelectric 180 degree walls are mechanically softer than the domains they separate
• Dynamics of Conducting Ferroelectric Domain Walls
• Phase transitions in ferroelectric domain walls