Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

Abstract

In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.

References in corpus (9)

• Boron nitride substrates for high-quality graphene electronics
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• Detecting Topological Currents in Graphene Superlattices
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Electronic properties of graphene hexagonal boron nitride moiré superlattice
• Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices
• Spontaneous Strains and Gap in Graphene on Boron Nitride
• Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La${}_{2-x}$Sr${}_x$CuO${}_4$

Cited by in corpus (1)

• Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment