Photostrictive two-dimensional materials in the monochalcogenide family

Abstract

Photostriction is predicted for SnS and SnSe monolayers, two-dimensional ferroelectrics with rectangular unit cells (the lattice vector ${\mathbf{a}}_1$ is larger than ${\mathbf{a}}_2$) and an intrinsic dipole moment parallel to ${\mathbf{a}}_1$. Photostriction in these two-dimensional materials is found to be induced by a screened electric polarization in the photoexcited electronic state (i.e., a converse piezoelectric effect) that leads to a compression of $a_1$ and a comparatively smaller increase of $a_2$ for a reduced unit cell area. The structural change documented here is ten times larger than that observed in BiFeO${}_3$, making monochalcogenide monolayers an ultimate platform for this effect. This structural modification should be observable under experimentally feasible densities of photexcited carriers on samples that have been grown already, having a potential usefulness for light-induced, remote mechano-opto-electronic applications.

arXiv comment5 pages, 4 figures, one Table

References in corpus (19)

• Pseudopotentials for high-throughput DFT calculations
• Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
• Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
• Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
• Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
• Light-induced size changes in BiFeO3 crystals
• Why all the fuss about 2D semiconductors?
• Trion induced negative photoconductivity in monolayer MoS2
• Delta Self-Consistent Field as a method to obtain potential energy surfaces of excited molecules on surfaces
• Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides
• Polarization and valley switching in monolayer group-IV monochalcogenides
• Photostrictive materials
• Designing isoelectronic counterparts to layered group V semiconductors
• Structural phase transition and material properties of few-layer monochalcogenides
• Localized excited charge carriers generate ultrafast inhomogeneous strain in the multiferroic BiFeO${}_3$
• Two-dimensional disorder in black phosphorus and monochalcogenide monolayers
• Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers
• Photostriction in BiFeO3: wavelength dependence
• Optical Writing of Magnetic Properties by Remanent Photostriction

Cited by in corpus (23)

• Electronic and optical properties of strained graphene and other strained 2D materials: a review
• Photoferroelectric oxides
• Two-Dimensional Multiferroic Semiconductors with Coexisting Ferroelectricity and Ferromagnetism
• Colloquium: Physical properties of group-IV monochalcogenide monolayers
• Two-dimensional ferroelectric tunnel junction: the case of monolayer In:SnSe/SnSe/Sb:SnSe homostructure
• Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
• Optically Driven Magnetic Phase Transition of Monolayer RuCl3
• Shift current bulk photovoltaic effect influenced by quasiparticles and excitons
• Mechanisms of pyroelectricity in three- and two-dimensional materials
• Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds
• Experimental formation of monolayer group-IV monochalcogenides
• Doping-induced persistent spin helix with large spin splitting in monolayer SnSe
• Ferroelectricity and piezoelectricity in monolayers and nanoplatelets of SnS
• Photo-induced electronic and spin topological phase transitions in monolayer bismuth
• Large photo-induced tuning of ferroelectricity in sliding ferroelectrics
• Group-IV monochalcogenide monolayers: two-dimensional ferroelectrics with weak intra-layer bonds and a phosphorene-like monolayer dissociation energy
• Tunable photostriction of halide perovskites through energy dependent photoexcitation
• Electro-optic properties from ab initio calculations in two-dimensional materials
• Low-symmetry two-dimensional BNP${}_2$ and C${}_2$SiS structures with high and anisotropic carrier mobilities
• Tuning energy barriers by doping 2D group-IV monochalcogenides
• Anisotropic terahertz optostriction in group-IV monochalcogenide compounds
• Photoinduced phase transitions and lattice deformation in 2D NbOX${}_2$ (X=Cl, Br, I)
• Epitaxial two-dimensional membranes under intrinsic and extrinsic strains