Shift current bulk photovoltaic effect influenced by quasiparticles and excitons
arXiv:1811.05287 · doi:10.1103/PhysRevB.101.045104
Abstract
We compute the shift current bulk photovoltaic effect (BPVE) in bulk BaTiO and two-dimensional monochalcogenide SnSe considering quasi-particle corrections and exciton effects. We explore changes in shift current peak position and magnitude reduction due to band renormalization. For BaTiO, we demonstrate that shift current is reduced near the band edge due to exciton effects. Comparison of these results with experiments on BaTiO indicate that mechanisms other than shift current may be contributing to BPVE. Additionally, we reveal that the shift current near the band gap shows only a small change due to excitons in two-dimensional SnSe, suggesting that the thin film geometry provides a feasible way to reduce the exciton effect on the shift current. These results suggest that many-body corrections are important for accurate assessments of bulk photovoltaic materials and to understand the mechanisms behind the BPVE
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