Combined electrical transport and capacitance spectroscopy of a $\mathrm{Mo}{\mathrm{S}}_2-\mathrm{LiNb}{\mathrm{O}}_3$ field effect transistor

Abstract

We have measured both the current-voltage ($I_{\mathrm{SD}}$-$V_{\mathrm{GS}}$) and capacitance-voltage ($C$-$V_{\mathrm{GS}}$) characteristics of a $\mathrm{Mo}{\mathrm{S}}_2-\mathrm{LiNb}{\mathrm{O}}_3$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_{\mathrm{SD}}$-$V_{\mathrm{GS}}$ characteristics over the \emph{entire range} of $V_{\mathrm{GS}}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.

arXiv commentto appear in Applied Physics Letters

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Cited by in corpus (2)

• Accumulation-mode two-dimensional field-effect transistor: Operation mechanism and thickness scaling rule
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