Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory

Abstract

We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A${}_g^1$, B${}_{2g}$ and A${}_g^2$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density functional analysis reveals that this is associated with the anomalies in electron-phonon coupling at the semiconductor to topological insulator transition through inversion of valence and conduction bands marking a change from trivial to nontrivial electronic topology. The frequencies of B${}_{2g}$ and A${}_g^2$ modes become anomalous in the rhombohedral phase at 7.4 GPa, and new modes appearing in the rhombohedral phase show anomalous softening with pressure. This is shown to originate from unusual structural evolution of black phosphorous with pressure, based on first-principles theoretical analysis.

13pages, 12figures

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• Emergent Dirac carriers across a pressure-induced Lifshitz transition in black phosphorus
• Pressure driven re-entrant magnetoelectric transition in honeycomb $F{e}_{4}N{b}_2{O}_9$
• Coexistence of pressure-induced structural phases in bulk black phosphorus: a combined x-ray diffraction and Raman study up to 18 GPa