U. V. Waghmare

activity

20162024

most citedRaman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory

45 citations · 50 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mtrl-sci2024

Pressure Dependence of Ultrafast Carrier Dynamics in Excitonic Insulator Ta $_{2}$ NiSe $_{5}$

Vikas Arora, Victor S Muthu, Arijit Sinha +3

An excitonic insulator (EI) phase is a consequence of collective many-body effects where an optical band gap is formed by the condensation of electron-hole pairs or excitons. We re…

cond-mat.mes-hall2020★ 2 cited

Symmetry induced phonon renormalization in few layers of 2H-MoTe $_{2}$ transistors: Raman and first-principles studies

Subhadip Das, Koyendrila Debnath, Biswanath Chakraborty +5

Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectroni…

cond-mat.mtrl-sci2019★ 3 cited

Anomalous temperature dependence of optical and acoustic phonons in Bi $_{2}$ Se $_{3}$ arising from stacking faults

Gyan Prakash, Koushik Pal, U. V. Waghmare +1

The class of layered 3D-topological insulators have shown intriguingly anomalous temperature dependence in their thermal expansion coefficients. It was proposed that stacking fault…

cond-mat.str-el2016★ 45 cited

Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory

Satyendra Nath Gupta, Anjali Singh, Koushik Pal +4

We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A $_{g}^{1}$ , B $_{2 g}$ and A $_{g}^{2}$ of the orthorhombic phase show…

Pressure Dependence of Ultrafast Carrier Dynamics in Excitonic Insulator Ta2​NiSe5​

Symmetry induced phonon renormalization in few layers of 2H-MoTe2​ transistors: Raman and first-principles studies

Anomalous temperature dependence of optical and acoustic phonons in Bi2​Se3​ arising from stacking faults

Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory

Pressure Dependence of Ultrafast Carrier Dynamics in Excitonic Insulator Ta $_{2}$ NiSe $_{5}$

Symmetry induced phonon renormalization in few layers of 2H-MoTe $_{2}$ transistors: Raman and first-principles studies

Anomalous temperature dependence of optical and acoustic phonons in Bi $_{2}$ Se $_{3}$ arising from stacking faults