activity
20152020
most citedChemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase

54 citations · 144 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2020★ 2 cited

Symmetry induced phonon renormalization in few layers of 2H-MoTe transistors: Raman and first-principles studies

Subhadip Das, Koyendrila Debnath, Biswanath Chakraborty +5

Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectroni…

cond-mat.mtrl-sci2018★ 5 cited

Origin of the monolayer Raman signature in hexagonal boron nitride: a first-principles analysis

Jorge Ontaneda, Anjali Singh, Umesh V. Waghmare +1

Monolayers of hexagonal boron nitride (h-BN) can in principle be identified by a Raman signature, consisting of an upshift in the frequency of the E2g vibrational mode with respect…

cond-mat.mtrl-sci2017★ 11 cited

Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport and density functional theory

Satyendra Nath Gupta, Anjali Singh, Koushik Pal +8

We report high pressure Raman, synchrotron x-ray diffraction and electrical transport studies on Weyl semimetals NbP and TaP along with first-principles density functional theoreti…

cond-mat.mtrl-sci2017★ 54 cited

Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase

Banabir Pal, Anjali Singh, Sharada. G +8

A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2…

cond-mat.mtrl-sci2017★ 25 cited

Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe: Raman and First-principles studies

Achintya Bera, Anjali Singh, D V S Muthu +2

High pressure Raman spectroscopy of bulk 2H-MoTe upto 29 GPa is shown to reveal two phase transitions (at 6 and 16.5 GPa), which are analyzed using first-principl…

cond-mat.str-el2016★ 45 cited

Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory

Satyendra Nath Gupta, Anjali Singh, Koushik Pal +4

We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A, B and A of the orthorhombic phase show…