Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts
arXiv:1612.00572 · doi:10.1103/PhysRevLett.119.116803
Abstract
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term considered until now.
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- Electrical control of the Zeeman spin splitting in two-dimensional hole systems
- Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
- G-factor of electrons in gate-defined quantum dots in a strong in-plane magnetic field
- Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
- Electrical operation of hole spin qubits in planar MOS silicon quantum dots
- Strong enhancement of heavy-hole Landé factor in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy
- Anomalous Josephson Effect in Topological Insulator-Based Josephson Trijunction
- Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
- Non-linear anomalous Hall effect of two-dimensional spin-3/2 heavy holes
- Dephasing of planar Ge hole spin qubits due to 1/ charge noise
- Zeeman spin-orbit coupling in antiferromagnetic conductors