Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors
arXiv:1610.09021 · doi:10.1039/C6CP05810H
Abstract
In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (Lc) along axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at Lc ranging from 3.90Å to 4.10Å. In particular, a field effect transistor (FET) based on a 12-ZPNT (with 12 unit cells in transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at Lc= 4.60Å. However, only weak gate modulation is demonstrated when the nanotube becomes semimetal at Lc= 4.10Å. This study indicates that ZPNTs are profoundly appealing in applications in the strain sensors. Our findings pave the way for development of high-performance strain-engineered electronics based on Dirac Fermions in 1D materials.
References in corpus (12)
- Phosphorene: A New 2D Material with High Carrier Mobility
- Density functional method for nonequilibrium electron transport
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Phosphorene nanoribbons, nanotubes and van der Waals multilayers
- Measurement of mobility in dual-gated MoS2 transistors
- Fermi velocity engineering in graphene by substrate modification
- Vibrational and optical properties of MoS: from monolayer to bulk
- Chemical functionalization on planar polysilane and graphane
- High stability of faceted nanotubes and fullerenes of multi-phase layered phosphorus: A computational study
- Effects of intrinsic strain on the structural stability and mechanical properties of phosphorene nanotubes