2 citations · 4 across the 4 of their papers we have counts for
4 papers
MoS Dual-gate Transistors with Electrostatically Doped Contacts
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen +13
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported…
Strain effect engineered in α-Al2O3/monolayer MoS2 interface by first principle calculations
Sheng Yu, Shunjie Ran, Hao Zhu +4
With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductor…
Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors
Sheng Yu, Hao Zhu, Kwesi Eshun +4
In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle comput…