Charge puddles in a completely compensated topological insulator
arXiv:1609.07785 · doi:10.1088/1367-2630/18/7/073024
Abstract
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
References in corpus (9)
- Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
- Controlling bulk conductivity in topological insulators: Key role of anti-site defects
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
- Why is the bulk resistivity of topological insulators so small?
- Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator