Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO${}_3$

Abstract

The high room temperature mobility and the electron effective mass in BaSnO${}_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from $8.3\times 10^{18}$ to $7.3\times 10^{20}$~cm${}^{-3}$. Both the optical band gap widening by conduction band filling and the carrier scattering mechanisms in the low and high doping regimes are consistently described employing parameters solely based on the intrinsic physical properties of BaSnO${}_3$. The results explain the current mobility limits in epitaxial films and demonstrate the potential of BaSnO${}_3$ to outperform established wide band gap semiconductors also in the moderate doping regime.

arXiv comment26 pages, 9 figures

References in corpus (5)

• High Mobility in a Stable Transparent Perovskite Oxide
• Physical properties of transparent perovskite oxides (Ba,La)SnO3 with high electrical mobility at room temperature
• Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate
• First-principles analysis of electron transport in BaSnO${}_3$
• Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO${}_3$, BaSnO${}_3$ and SrTiO${}_3$

Cited by in corpus (8)

• Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN
• Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO${}_3$, BaSnO${}_3$ and SrTiO${}_3$
• A consistent picture of excitations in cubic BaSnO${}_3$ revealed by combining theory and experiment
• High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO${}_3$/SrZrO${}_3$ heterostructures
• Tuning two-dimensional electron (hole) gases at LaInO${}_3$/BaSnO${}_3$ interfaces: Impact of polar distortions, termination, and thickness
• Epitaxial Films and Devices of Transparent Conducting Oxides: La:BaSnO${}_3$
• Combined Spectroscopy and Electrical Characterization of La:BaSnO${}_{\text{3}}$ Thin Films and Heterostructures
• Surface state at $BaSn{O}_3$ evidenced by angle-resolved photoemission spectroscopy and ab initio calculations