Phase-transitions in spin-crossover thin films probed by graphene transport measurements
arXiv:1609.04738 · doi:10.1021/acs.nanolett.6b03780
Abstract
Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room temperature while responding to numerous external stimuli. Atomically-thin 2D materials such as graphene attract a lot of attention for their fascinating electrical, optical, and mechanical properties, but also for their reliability for room-temperature operations. Here, we demonstrate that thermally-induced spin-state switching of spin-crossover nanoparticle thin films can be monitored through the electrical transport properties of graphene lying underneath the films. Model calculations indicate that the charge carrier scattering mechanism in graphene is sensitive to the spin-state dependence of the relative dielectric constants of the spin-crossover nanoparticles. This graphene sensor approach can be applied to a wide class of (molecular) systems with tunable electronic polarizabilities.
main text: 13 pages, 5 figures ; SI: 14 pages, 12 figures
References in corpus (10)
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Charged Impurity Scattering in Graphene
- Atomic Structure of Graphene on SiO2
- Carrier transport in 2D graphene layers
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Electron scattering on microscopic corrugations in graphene
- Substrate limited electron dynamics in graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Theory of charged impurity scattering in two dimensional graphene
- Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics
Cited by in corpus (5)
- Spin-State dependent Conductance Switching in Single Molecule-Graphene Junctions
- Design and processing as ultrathin films of a sublimable Iron(II) spin crossover material exhibiting efficient and fast light-induced spin transition
- Dynamical Screening of Local Spin Moments at Metal-Molecule Interfaces
- Electrical sensing of the thermal and light induced spin transition in robust contactless spin-crossover/graphene hybrid devices
- Strain Switching in van der Waals Heterostructures triggered by a Spin-Crossover Metal Organic Framework