Rashba-Edelstein Magnetoresistance in Metallic Heterostructure

Abstract

We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

References in corpus (3)

• Dissipationless Quantum Spin Current at Room Temperature
• Direct electronic measurement of the spin Hall effect
• Theory of spin Hall magnetoresistance

Cited by in corpus (9)

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• Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co${}_x$Fe${}_{1-x}$ single-crystal films
• Efficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface
• Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers
• Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
• Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces
• Role of interfacial oxidation in generation of spin-orbit torques
• Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO${}_3$/SrTiO${}_3$ interface
• Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions