Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction

Abstract

By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.

17 pages, 3 Figures in the main text, supplementary information included

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• Exciton Binding Energy of Monolayer WS2
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Cited by in corpus (3)

• Superlubricity of epitaxial monolayer WS2 on graphene
• Li-intercalated Graphene on SiC(0001): an STM study
• Deterministic direct growth of WS2 on CVD graphene arrays