Electron nuclear double resonance with donor-bound excitons in silicon

Abstract

We present Auger-electron-detected magnetic resonance (AEDMR) experiments on phosphorus donors in silicon, where the selective optical generation of donor-bound excitons is used for the electrical detection of the electron spin state. Because of the long dephasing times of the electron spins in isotopically purified ${}^{28}$Si, weak microwave fields are sufficient, which allow to realize broadband AEDMR in a commercial ESR resonator. Implementing Auger-electron-detected ENDOR, we further demonstrate the optically-assisted control of the nuclear spin under conditions where the hyperfine splitting is not resolved in the optical spectrum. Compared to previous studies, this significantly relaxes the requirements on the sample and the experimental setup, e.g. with respect to strain, isotopic purity and temperature. We show AEDMR of phosphorus donors in silicon with natural isotope composition, and discuss the feasibility of ENDOR measurements also in this system.

5 pages, 5 figures

References in corpus (12)

• Solid state quantum memory using the 31P nuclear spin
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Electrically controlling single spin qubits in a continuous microwave field
• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Stark Tuning of Donor Electron Spins in Silicon
• Electrical detection of spin echoes for phosphorus donors in silicon
• Simultaneous sub-second hyperpolarization of the nuclear and electron spins of phosphorus in silicon
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Davies ENDOR revisited: Enhanced sensitivity and nuclear spin relaxation
• Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon
• Pulsed Low-Field Electrically Detected Magnetic Resonance