Low temperature Hall effect in bismuth chalcogenides thin films

Abstract

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

7 pages, 5 figures

References in corpus (6)

• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Why is the bulk resistivity of topological insulators so small?
• Intrinsic conduction through topological surface states of insulating Bi${}_2$Te${}_3$ epitaxial thin films
• Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films
• Topological Insulator Thin Films Starting from the Amorphous Phase - Bi${}_2$Se${}_3$ as Example
• Intervalley scattering and weak localization in Si-based two-dimensional structures

Cited by in corpus (4)

• Bulk cyclotron resonance in the topological insulator Bi2Te3
• Thickness dependence of electron-electron interactions in topological p-n junctions
• Anomalous behavior of the $E_u^1$ infrared-active phonon mode in a Bi${}_{2-x}$Sr${}_x$Se${}_3$ crystal
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States