Origin of the Metal-Insulator Transition of Indium Atom Wires on Si(111)
arXiv:1605.02015 · doi:10.1103/PhysRevB.93.241408
Abstract
As a prototypical one-dimensional electron system, self-assembled indium (In) nanowires on the Si(111) surface have been believed to drive a metal-insulator transition by a charge-density-wave (CDW) formation due to electron-phonon coupling. Here, our first-principles calculations demonstrate that the structural phase transition from the high-temperature 4x1 phase to the low-temperature 8x2 phase occurs through an exothermic reaction with the consecutive bond-breaking and bond-making processes, giving rise to an energy barrier between the two phases as well as a gap opening. This atomistic picture for the phase transition not only identifies its first-order nature but also solves a long-standing puzzle of the origin of the metal-insulator transition in terms of the x2 periodic lattice reconstruction of In hexagons via bond breakage and new bond formation, not by the Peierls instability-driven CDW formation.
arXiv comment5 pages, 4 figures + supplemental material
References in corpus (7)
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Cited by in corpus (6)
- Circular dichroism of emergent chiral stacking orders in quasi-one-dimensional charge density waves
- Grand canonical Peierls transition in In/Si(111)
- Excited state band mapping and momentum-resolved ultrafast population dynamics in In/Si(111) nanowires investigated with XUV based time- and angle-resolved photoemission spectroscopy
- Charge density wave melting in one-dimensional wires with femtosecond sub-gap excitation
- Band Structure Dynamics in Indium Wires
- Two-dimensional chiral stacking orders in quasi-one-dimensional charge density waves