Intrinsic magnetism at silicon surfaces
arXiv:1008.5358 · doi:10.1038/ncomms1056
Abstract
It has been a long-standing goal to create magnetism in a nonmagnetic material by manipulating its structure at the nanometer scale. This idea may be realized in graphitic carbon: evidence suggests magnetic states at the edges of graphene ribbons and at grain boundaries in graphite. Such phenomena have long been regarded as unlikely in silicon because there is no graphitic bulk phase. Here we show theoretically that intrinsic magnetism indeed exists in a class of silicon surfaces whose step edges have a nanoscale graphitic structure. This magnetism is intimately connected to recent observations, including the coexistence of double- and triple-period distortions and the absence of edge states in photoemission. Magnetism in silicon may ultimately provide a path toward spin-based logic and storage at the atomic level.
6 pages, 3 figures
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Cited by in corpus (32)
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- Spin Chains and Electron Transfer at Stepped Silicon Surfaces
- Creation and annihilation of mobile fractional solitons in atomic chains
- Spectroscopic evidence for spin-polarized edge states in graphitic Si nanowires
- Effect of non-magnetic impurities on the magnetic states of anatase TiO
- Thermally-induced crossover from 2D to 1D behavior in an array of atomic wires: silicon dangling-bond solitons in Si(553)-Au
- Direct momentum-resolved observation of one-dimensional confinement of externally doped electrons within a single subnanometre-scale wire
- Silicon spin chains at finite temperature: dynamics of Si(553)-Au
- Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface
- Plasmon Standing Waves by Oxidation of Si(553)-Au
- Z3 Charge Density Wave of Silicon Atomic Chains on a Vicinal Silicon Surface
- Origin of the Metal-Insulator Transition of Indium Atom Wires on Si(111)
- Current-Dependent Periodicities of Si(553)-Au
- Two-dimensional crossover and strong coupling of plasmon excitations in arrays of one-dimensional atomic wires
- Structure of self-assembled Mn atom chains on Si(001)
- Spontaneous Appearance of Low-dimensional Magnetic Electron System on Semiconductor Nanostructures
- On the origin of in-gap states in homogeneously disordered ultrathin films. MoC case
- Equivalence of Rashba-Hubbard and Hubbard chains
- Competing charge density wave and antiferromagnetism of metallic atom wires in GaN(100) and ZnO(100)
- Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class
- Correlations and confinement of excitations in an asymmetric Hubbard ladder
- Competing edge structures of Sb and Bi bilayers by trivial and nontrivial band topologies
- Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study
- Hydrogen adsorption-induced nanomagnetism at the Si(111)-(77) surface
- Effective removal of global tilt from topography images of vicinal surfaces with narrow terraces
- Surface magnetism of gallium arsenide nanofilms
- One-dimensional physics in transition-metal nanowires: Phases and elementary excitations
- Adsorbate induced manipulation of 1D atomic nanowires: Soliton mediated degradation of long-range order in the Si(553)-Au system
- Temperature dependent ARPES of the metallic-like bands in Si(553)-Au
- Antiferromagnetic ordering of dangling-bond electrons at the stepped Si(001) surface