Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)

Abstract

It was recently proposed that the stress state of a material can also be altered via electron or hole doping, a concept termed electronic stress (ES), which is different from the traditional mechanical stress (MS) due to lattice contraction or expansion. Here we demonstrate the equivalence of ES and MS in structural stabilization, using In wires on Si(111) as a prototypical example. Our systematic density-functional theory calculations reveal that, first, for the same degrees of carrier doping into the In wires, the ES of the high-temperature metallic 4x1 structure is only slightly compressive, while that of the low-temperature insulating 8x2 structure is much larger and highly anisotropic. As a consequence, the intrinsic energy difference between the two phases is significantly reduced towards electronically phase-separated ground states. Our calculations further demonstrate quantitatively that such intriguing phase tunabilities can be achieved equivalently via lattice-contraction induced MS in the absence of charge doping. We also validate the equivalence through our detailed scanning tunneling microscopy experiments. The present findings have important implications in understanding the underlying driving forces involved in various phase transitions of simple and complex systems alike.

arXiv comment6 pages, 6 figures

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• Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
• A tight-binding approach to uniaxial strain in graphene
• Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principles Study
• Quantum Stress: Density Functional Theory Formulation and Physical Manifestation
• Driving force of phase transition in Indium nanowires on Si(111)
• Interplay between Quantum Size Effect and Strain Effect on Growth of Nanoscale Metal Thin Film
• Atomic structure, energetics, and dynamics of topological solitons in Indium chains on Si(111) surfaces

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• Two-dimensional chiral stacking orders in quasi-one-dimensional charge density waves