320 citations · 511 across the 10 of their papers we have counts for
10 papers
High-density single-atom electrocatalytic centers on two-dimensional topological platinum tellurides with Te-vacancy superstructure
Xin Xu, Xuechun Wang, Shuming Yu +20
Chemical activation of the intrinsically inert basal planes of transition metal dichalcogenides (TMDs) is crucial for developing high-efficiency electrocatalysts for energy technol…
Evidence for chiral superconductivity on a silicon surface
F. Ming, X. Wu, C. Chen +9
Sn adatoms on a Si(111) substrate with 1/3 monolayer coverage form a two-dimensional triangular adatom lattice with one unpaired electron per site and an antiferromagnetic Mott ins…
Superconductivity in a hole-doped Mott-insulating triangular adatom layer on a silicon surface
Xuefeng Wu, Fangfei Ming, Tyler S. Smith +5
Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilu…
Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions
Tyler S. Smith, Fangfei Ming, Daniel González Trabada +5
Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario invo…
Zero-bias anomaly in nano-scale hole-doped Mott insulators on a triangular silicon surface
Fangfei Ming, Tyler S. Smith, Steven Johnston +2
Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkabl…
Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces
Seho Yi, Fangfei Ming, Ying-Tzu Huang +8
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunn…