Grand canonical Peierls transition in In/Si(111)
arXiv:1509.08296 · doi:10.1103/PhysRevB.93.241407
Abstract
Starting from a Su-Schrieffer-Heeger-like model inferred from first-principles simulations, we show that the metal-insulator transition in In/Si(111) is a first-order grand canonical Peierls transition in which the substrate acts as an electron reservoir for the wires. This model explains naturally the existence of a metastable metallic phase over a wide temperature range below the critical temperature and the sensitivity of the transition to doping. Raman scattering experiments corroborate the softening of the two Peierls deformation modes close to the transition.
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Cited by in corpus (12)
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- Charge density wave melting in one-dimensional wires with femtosecond sub-gap excitation
- Origin of Immediate Damping of Coherent Oscillations in Photoinduced Charge Density Wave Transition
- Band Structure Dynamics in Indium Wires
- Origin of the Metal-Insulator Transition of Indium Atom Wires on Si(111)
- Quantum Floquet anomalous Hall states and quantized ratchet effect in one-dimensional dimer chain driven by two ac electric fields
- Correlated atomic wires on substrates. I. Mapping to quasi-one-dimensional models
- Grand-canonical Peierls theory for atomic wires on substrates
- Mode-selective ballistic pathway to a metastable electronic phase