Metal-insulator transition in the In/Si(111) surface
arXiv:cond-mat/0512613 · doi:10.1016/j.susc.2006.01.092
Abstract
The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [New J. of Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.
Presented in the 23 European Conference in Surface Science, Berlin, September 2005. Submitted to Surface Science (proceedings of the conference) in August 2005
References in corpus (3)
Cited by in corpus (6)
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