Internal pressure in superconducting Cu intercalated Bi${}_2$Se${}_3$

Abstract

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu${}_x$Bi${}_2$Se${}_3$. We find that in these samples the band-gap at the $\Gamma$ point is much larger than in pristine Bi${}_2$Se${}_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu${}_x$Bi${}_2$Se${}_3$.

To be published in PRB

References in corpus (7)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Pressure induced Superconductivity in Topological Compound Bi2Te3
• Bulk superconducting phase with a full energy gap in the doped topological insulator Cu_xBi_2Se_3
• Local Measurements of the Superconducting Pairing Symmetry in CuxBi2Se3
• Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3
• Evolution of the fermi surface of a doped topological insulator with carrier concentration
• Doping-dependent charge dynamics in CuxBi2Se3

Cited by in corpus (4)

• Structural distortion behind the nematic superconductivity in Sr${}_x$Bi${}_2$Se${}_3$
• Odd-parity superconductivity near inversion breaking quantum critical point in one dimension
• Electronic and Vibrational Excitations on the Surface of the Three-Dimensional Topological Insulator Bi${}_2$Te${}_{3-x}$Se${}_x$ (x = 0, 2, 3)
• Superconducting properties of Cu intercalated Bi${}_2$Se${}_3$ studied by Muon Spin Spectroscopy