Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

Abstract

In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As a side effect, a strong Dzyaloshinskii-Moriya interaction (DMI) may arise in such systems. Here we investigate the impact of DMI on the magnetic cell performance, using micromagnetic simulations. We find that DMI strongly promotes non-uniform magnetization states and non-uniform switching modes of the magnetic layer. It appears to be detrimental for both the thermal stability of the cell and its switching current, leading to considerable deterioration of the cell performance even for a moderate DMI amplitude.

5 pages, 3 figures

References in corpus (3)

• Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature
• Breathing modes of confined skyrmions in ultrathin magnetic dots
• Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance

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• Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance
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• Dynamic Skyrmion-Mediated Switching of Perpendicular MTJs: Scaling to 20 nm with Thermal Noise
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• Energy efficient and fast reversal of a fixed skyrmions with spin current assisted by voltage controlled magnetic anisotropy
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• Tailoring energy barriers of Bloch-point-mediated transitions between topological spin textures
• Spin Torque Oscillator and Magnetization Switching in double barrier Rashba Zeeman Magnetic Tunnel Junction
• A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching