420 citations · 1k across the 8 of their papers we have counts for
8 papers
Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots
Andrea Meo, Roman Chepulskyy, Dmytro Apalkov +2
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (…
Thermally nucleated magnetic reversal in CoFeB/MgO nanodots
Andrea Meo, Phanwadee Chureemart, Shuxia Wang +4
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based m…
Disruptive effect of Dzyaloshinskii-Moriya interaction on the MRAM cell performance
J. Sampaio, A. V. Khvalkovskiy, M. Kuteifan +5
In order to increase the thermal stability of a magnetic random access memory (MRAM) cell, materials with high spin-orbit interaction are often introduced in the storage layer. As…
A Dzyaloshinskii-Moriya Anisotropy in Nanomagnets with in-plane Magnetization
M. Cubukcu, J. Sampaio, K. Bouzehouane +4
We report on a new source of in-plane anisotropy in nanomagnets due to the presence of Dzyaloshinskii-Moriya interaction (DMI). This anisotropy depends on the shape of the magnet,…
Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion
A. V. Khvalkovskiy, V. Cros, D. Apalkov +6
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrat…
Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers
Zhitao Diao, Dmytro Apalkov, Mahendra Pakala +2
We present spin transfer switching results for MgO based magnetic tunneling junctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to 150% and low intrinsic switc…