Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

Abstract

The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

arXiv comment9 pages, 9 figures, TWEPP 2015 Conference, submitted to JINST

References in corpus (2)

• DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization
• Measurements on HV-CMOS Active Sensors After Irradiation to HL-LHC fluences

Cited by in corpus (5)

• Neutron irradiation test of depleted CMOS pixel detector prototypes
• Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
• Charge collection properties of irradiated depleted CMOS pixel test structures
• Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade
• Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment