Role of different scattering mechanisms on the temperature dependence of transport in graphene

Abstract

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

Accepted for Publication in Scientific Reports, 2015

References in corpus (22)

• The electronic properties of graphene
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Dielectric function, screening, and plasmons in 2D graphene
• Charged Impurity Scattering in Graphene
• Carrier transport in 2D graphene layers
• A self-consistent theory for graphene transport
• Temperature dependent transport in suspended graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Quantum Hall Ferromagnetism in Graphene
• Evidence of Klein tunneling in graphene p-n junctions
• Quantum transport of massless Dirac fermions in graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
• Screening induced temperature dependent transport in 2D graphene
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
• Single particle relaxation time versus transport scattering time in a 2D graphene layer
• Random resistor network model of minimal conductivity in graphene
• Effect of disorder on a graphene p-n junction
• Effect of short- and long-range scattering in the conductivity of graphene: Boltzmann approach vs tight-binding calculations
• Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements

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