Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure

Abstract

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current IDS by ~+ or -0.5 % with a gate-source voltage of + or -10.8 V and also modulate IDS by up to 60 % with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

14 pages, 4 figures

Cited by in corpus (3)

• Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
• Impurity band conduction in group-IV ferromagnetic semiconductor Ge1-xFex with nanoscale fluctuations in Fe concentration
• Spin-dependent transport and current modulation in a current-in-plane field-effect transistor