27 citations · 43 across the 4 of their papers we have counts for
4 papers
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor
Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama +3
A vertical spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) is a promising low-power device for the post scaling era. Here, using a ferromagnetic-semiconductor…
Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Iriya Muneta, Toshiki Kanaki, Shinobu Ohya +1
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of…
Spin-dependent transport and current modulation in a current-in-plane field-effect transistor
Toshiki Kanaki, Tomohiro Koyama, Daichi Chiba +2
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate elect…
Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure
Toshiki Kanaki, Hirokatsu Asahara, Shinobu Ohya +1
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferr…