Robust luminescence of the silicon-vacancy center in diamond at high temperatures
arXiv:1510.06766 · doi:10.1063/1.4938256
Abstract
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.
6 pages, 5 figures
References in corpus (4)
- Single-photon emitting diode in silicon carbide
- Low temperature investigations of single silicon vacancy colour centres in diamond
- Photophysics of single silicon vacancy centers in diamond: implications for single photon emission
- Electrical excitation of silicon-vacancy centers in single crystal diamond
Cited by in corpus (8)
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- All-optical nanoscale thermometry with silicon-vacancy centers in diamond
- Ultrabright single-photon source on diamond with electrical pumping
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- Superinjection in diamond p-i-n diodes: bright single-photon electroluminescence of color centers beyond the doping limit
- Optical properties of silicon-implanted polycrystalline diamond membranes
- Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-m pinhole
- Gate-tunable single-photon electroluminescence of color centers in silicon carbide