Tunnel Junction Enhanced Nanowire Ultraviolet Light Emitting Diodes

Abstract

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 microwatts of UV emission at ~310 nm is measured with external quantum efficiency in the range of 4 - 6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.

17 pages, 6 figures

References in corpus (4)

• Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
• InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes
• Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
• Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

Cited by in corpus (7)

• 229 nm UV LEDs using p-type silicon for increased hole injection
• Tunnel-injected sub-260 nm ultraviolet light emitting diodes
• Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs
• Accurate $abinitio$ tight-binding Hamiltonians: effective tools for electronic transport and optical spectroscopy from first principles
• Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes
• Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
• Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires