Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon

Abstract

Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5*10^5 A/cm^2.

arXiv comment10 pages, 4 figures

References in corpus (1)

• Quantum transport in GaN/AlN double-barrier heterostructure nanowires

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• Atomically Sharp 318nm Gd:AlGaN Ultraviolet Light Emitting Diodes on Si with Low Threshold Voltage
• One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique