40 citations · 65 across the 3 of their papers we have counts for
4 papers
Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films
Dong Su Yu, Shashu Tomar, Zixiu Huang +7
LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type tr…
Ferroelectric Epsilon-WO3 Nanoparticles and Its Bipolaron Driven Opto-electronic Properties at Room Temperature
Mohammad M. Rahaman, Jose Flores, Mohamed Y. Noor +6
A unique polymorph of binary tungsten trioxide, the epsilon phase of WO3, has non-centrosymmetric ferroelectric structure, typically stable below -43 degree C in bulk. We have stab…
Optical control of internal electric fields in band-gap graded InGaN nanowires
N. Erhard, A. T. M. Golam Sarwar, F. Yang +3
InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN int…
Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
S. D. Carnevale, C. Marginean, P. J. Phillips +4
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial…