65 citations · 162 across the 7 of their papers we have counts for
7 papers
Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices
A. T. M. Golam Sarwar, Santino D. Carnevale, Fan Yang +4
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination…
Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses
Zihao Yang, Thomas F. Kent, Jing Yang +3
Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-ass…
Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN
A. T. M. Golam Sarwar, Santino D. Carnevale, Thomas F. Kent +3
We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy.…
Atomically Sharp 318nm Gd:AlGaN Ultraviolet Light Emitting Diodes on Si with Low Threshold Voltage
Thomas F. Kent, Santino D. Carnevale, Roberto C. Myers
Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si sub…
GdN Nanoisland-Based GaN Tunnel Junctions
Sriram Krishnamoorthy, Thomas Kent, Jing Yang +3
We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (s…
Epitaxial Ferromagnetic Nanoislands of Cubic GdN in Hexagonal GaN
T. F. Kent, J. Yang, L. Yang +2
Periodic structures of GdN particles encapsulated in a single crystalline GaN matrix were prepared by plasma assisted molecular beam epitaxy. High resolution X-ray diffractometery…
Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon
S. D. Carnevale, C. Marginean, P. J. Phillips +4
Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial…