Atomically Sharp 318nm Gd:AlGaN Ultraviolet Light Emitting Diodes on Si with Low Threshold Voltage

Thomas F. Kent, Santino D. Carnevale, Roberto C. Myers

Self assembled AlGaN polarization-induced nanowire light emitting diodes (PINLEDs) with Gd-doped AlN active regions are prepared by plasma-assisted molecular beam epitaxy on Si sub…